Solid State Opening Switch References: used in my early DOS / SOS experiments:
1) A NOVEL NANOSECOND SEMICONDUCTOR OPENING SWITCH FOR MEGAVOLT REPETITIVE PULSED POWER TECHNOIDGY:EXPERIMNT AND APPLICATIONS; Yu.A.Kotov, G.A.Mesyats, S.N.Rukin,A.L.Filatov, and S.K.]Syubutin; Institute of Blectrophysics Russian Academy of Sciences, Ural Division 34, Komsomolskaya Str., ]Ikaterinburg, 620219, Russia; 1993 IEEE Pulsed Power Conference
2) SEMICONDUCTOR OPENING SWITCH RESEARCH AT IEP ; G. A. Mesyats, S.N. Rukin, 'S. K. Lyubutin, S.A. Darznek,Ye. A. Litvinov, V.A. Telnov,
S.N. Tsiranov, A.M. Turov
Institute of Electrophysics Russian Academy of Sciences, Ural Division34, Komsomolskaya Str., Ekaterinburg,
620219, Russia; 1995 IEEE Pulsed Power Conference
3) EVALUATION OF A RUSSIAN SOS DIODE FOR USE IN A COMPACT MODULATOR SYSTEM; J. Dickens, M. Kristiansen, M. Giesselmann and J. G. Kim; Texas Tech University Pulsed Power Laboratory Department of Electrical Engineering Lubbock, TX 79409 ; 1997 1993 IEEE Pulsed Power Conference
4) SOS-BASED PULSED POWER: DEVELOPMENT AND APPLICATIONS; S.N. Rukin, G.A. Mesyats, S.A. Darznek, S.K. Lyubutin, A.V. Ponomarev, B.G. Slovikovsky, S.P. Timoshenkov, A.I. Bushlyakov, S.N. Tsiranov Institute of Electrophysics Russian Academy of Sciences, Ural Division 34, Komsomolskaya Str., Ekaterinburg, 620049, Russia; 1999 IEEE Pulsed Power Conference
5) PHYSICAL BASIS FOR HIGH POWER SEMICONDUCTOR NANOSECOND OPENING SWITCHES; Igor V.Grekhov’, Gennady A.Mesyats2 ‘Ioffe Institute RAS.
26 Politekhnicheskaya, St. Petersburg, 19402 1 Russia 21nstitute of Electrophysics GSP 387 RAS, 34 Komsomolskaya, Ekaterinburg, 6202 19 Rus ; 1999 IEEE Pulsed Power Conference
6) REPETITIVE SHORT PULSE SOS-GENERATORS; S.K. Lyubutin, G.A. Mesyats, S.N. Rukin, and B.G. Slovikovsky Institute of Electrophysics Russian Academy of Sciences, Ural Division 34, Komsomolskaya Str., Ekaterinburg, 620049, Russia; 1999 IEEE Pulsed Power Conference
7) EXPERIMENTAL STUDY OF SOS-BASED GENERATOR FOR LOW IMPEDANCE LOAD*; S.K. Lyubutin, S.N. Rukin, B.G. Slovikovsky, and S.N. Tsiranov
Institute
of Electrophysics Russian Academy of Sciences, Ural Division 34, Komsomolskaya Str., Ekaterinburg, 620049, Russia; 1999 IEEE Pulsed
Power Conference
my early DOS / SOS experiments
Background / my early DOS / SOS experiments
DOS (diode opening switch) notation is used in my experimental projects to avoid confusion of the term SOS as used in the above literature. Ref 1 uses the term SOS for using HV rectifier diodes for the opening switch effect; however the later references indicate step recovery like diodes eventuall used. In my experiments I settled on using the UF1007 ultrafast recovery diode as the opening switch.
My DOS / SOS Notation:
On my home page PDF references "A, B, C, D, E, F,and G" span from early 2000 to early 2004 based on the references listed below. As an experimentalist I was familiar with the problems relating to transistor charge saturation in a junction; the idea of quickly reversing the polarity on saturated diode junction lead to temporary current until the saturated charge is depleted. Thus the idea of this temporary current, towards the end of the depletion, drops quickly was intriguing to me. Additionally Ref. 1 describes the SOS effect using HV diodes; I decided to try it out myself (see "A" "). "The experiment conducted 25 Feb. 00 was to observe diode opening switch (DOS) effects for three commercial 1 kv PIV rated diodes (1N4007, FR107, and UF1007); and the effect of connecting them in series." Best results were obtained using the UF1007; the circuits used in the references was simplified (omitting magnetic switches) using a shock excited LC circuit where the test diode was forward biased initially. When the LC reverses the diode becomes reverse biased; however there is initially temporary current until depletion. The closing switch, initiating the above process, was mechanical. "B" simply replaced the mechanical SW with an SCR.
"C and D" represents one of my early experiments for the purppose of achieving much higher voltage and faster rise. To do this several diodes had to be conected in series; use smaller inductors in the LC circuit; use sever SOS stages; and magnetic switching to achieve much faster reverse biasing the diode array. Initially for operating at much higher voltages spark gaps were used.
"E" illustrates more of my early experiments from the lower voltage SCR devices up to the 300KV DOS using a Marx generator. "F" includes "E" but provides my early analysis; additionally the later use of SCR arrays for switching about 10KV ; and using this DOS to shock excite an 80 Mhz circuit.
"G" represents my 2002 to 2004 experiments; some repeative of "F". In the latter part I describe the construction and testing of the small compact all solid stage DOS pulse generators ( the ones used in my recent microwave shock excited waveguide experiments). In particular using SG leading pulse edge sharpening.